Rapid thermal low pressure chemical vapor deposition of TiN layers from the TiCI&lt;sub&gt;4&lt;/sub&gt;-NH&lt;sub&gt;3&lt;/sub&gt;-H&lt;sub&gt;2&lt;/sub&gt; gaseous phase

A Bouteville,L Imhoff,J.C Remy

doi:10.1109/mam.1998.887505

Rapid thermal low pressure chemical vapor deposition of TiN layers from the TiCI4-NH3-H2 gaseous phase

A Bouteville, L Imhoff + Show 1 more

https://doi.org/10.1109/mam.1998.887505

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Publication Date: Jan 1, 1998

Affiliation: Arts et Metiers Institute of Technology

#Thermal Low Pressure Chemical Vapor #Titanium Nitride Layers + Show 8 more

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Abstract

Titanium nitride layers have been deposited on silicon substrates by Rapid Thermal Low Pressure Chemical Vapor Deposition from TiC1/sub 4/-NH/sub 3/-H/sub 2/ gaseous phase. Our aim is to better understand the formation of TiN in order to reduce deposition temperature while keeping reasonable resistivity. All the investigations show the importance of the NH/sub 3//TiCl/sub 4/ ratio. Deposition has been first carried out in the temperature range of 700-900/spl deg/C then as low as 500/spl deg/C.

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