Rapid thermal low pressure chemical vapor deposition of TiN layers from the TiCI&lt;sub&gt;4&lt;/sub&gt;-NH&lt;sub&gt;3&lt;/sub&gt;-H&lt;sub&gt;2&lt;/sub&gt; gaseous phase

A Bouteville,J.C Remy,L Imhoff

doi:10.1109/mam.1998.887505

Rapid thermal low pressure chemical vapor deposition of TiN layers from the TiCI4-NH3-H2 gaseous phase

A Bouteville, J.C Remy + Show 1 more

https://doi.org/10.1109/mam.1998.887505

Copy DOI

Publication Date: Jan 1, 1998

Affiliation: Arts et Metiers Institute of Technology

#Thermal Low Pressure Chemical Vapor #Titanium Nitride Layers + Show 8 more

Abstract
Full-Text
Similar Papers

Abstract

Titanium nitride layers have been deposited on silicon substrates by Rapid Thermal Low Pressure Chemical Vapor Deposition from TiC1/sub 4/-NH/sub 3/-H/sub 2/ gaseous phase. Our aim is to better understand the formation of TiN in order to reduce deposition temperature while keeping reasonable resistivity. All the investigations show the importance of the NH/sub 3//TiCl/sub 4/ ratio. Deposition has been first carried out in the temperature range of 700-900/spl deg/C then as low as 500/spl deg/C.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Similar Papers

Paper Title

Journal

Date

Author

View more papers

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.