Abstract
Rapid thermal annealing (RTA) was investigated for curing doped and undoped spin-on glass films deposited onto silicon substrates. The annealed undoped spin-on glass (SOG) films present an important densification of the layers as a function of temperature and a reduction in the interfacial state density. The possibility of using rapid thermally annealed spin-on doped glass (SOD) films as a doping source as well as a surface passivation layer was investigated. The results show that the combination of spin-on film (after dilution of the solution with methanol) deposition and RTA can produce shallow lightly doped emitters. Sheet resistances lower than 150 Ω/□ are easily reached. Moreover, the minority-carrier diffusion length is improved owing to the gettering effect induced by phosphorus diffusion. The use as a passivation layer of the SOG or the remaining SOD oxide film makes this technique favourable for applications such as the fabrication of solar cells.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
