Rapid Thermal Annealing of Deposited Sio2 Films

Abstract

ABSTRACTSilicon dioxide films have beep deposited at an oxygen pressure and substrate temperature as low as 10−2 Pa and 300°C, respectively, using a partially ionized nozzle-beam technique. The refractive index of the film is equal to that of the thermally grown silicon dioxide film, but a frequency shift was obsrved in the infrared absorption peak at 1045 cm as compared to 1080 cm−1 of the thermally grown silicon dioxide film. This frequency shift disappeared after the deposited film was annealed in a rapid thermal annealing system utilizing an incoherent light source. We emphasize that from the standpoint of device fabrication, although the annealing temperature is high (%1100°C), the time is very short (seconds), so that this process is still compatible to the requirementsof low temperature processing. Effects of rapid thermal annealing on LPCVD and PECVD oxides are also studied and the results are compared to that of the oxide deposited by the partially ionized nozzle-beam technique.