Abstract
The microstructural, chemical and electrical properties of Mo/ZrO2/n-Si/Al metal/insulator/semiconductor/metal (MISM) heterostructure with zirconium oxide (ZrO2) as an insulating layer are investigated. In comparison to the metal/semiconductor/metal (MSM) structure, the as-deposited and 600 °C annealed MISM heterostructures demonstrate outstanding rectifying performance and extremely low reverse leakage current. The as-deposited (0.98 eV) and 600 °C annealed MISM heterostructures (1.12 eV) have a higher barrier height (ɸb) than the MSM structure (0.70 eV), which indicates that the barrier height is influenced by the ZrO2 insulating layer. The results show that the ɸb values are improved for 600 °C annealed heterostructure. The forward bias C–V and G/w-V graphs exhibit anomalous peak/variations and three distinct regions called accumulation, depletion, and inversions with respect to the frequency that are attributed to the interface states and RS. The results indicate that ZrO2 film is an effective high-k oxide for the preparation of novel electronic device applications.
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