Al/Si(100) Schottky barrier formation using nozzle jet beam deposition

Abstract

High Schottky barrier height of φb=0.77 eV for Al/n-Si was obtained by the nozzle jet beam deposition method in a conventional vacuum condition without post-annealing. Previously, this high barrier height was only observable in the vacuum cleaved or sputter-etched samples in an ultrahigh vacuum condition. The Schottky barrier height was reduced if a partially ionized jet beam with 0.1% ions was used in the deposition process and if a bias of ≥0.5 kV was applied to the substrate. The reduction of the Schottky barrier height is attributed to the surface damage caused by the energetic ion bombardment. It is shown that a high barrier height (≂0.8 eV) and a low leakage current were retained after a relatively low-temperature (≂450 °C) annealing process if the applied bias was ≤1 kV.