Abstract
AbstractA method, technological arrangement, and some special features of the process for TiSi2 thin film formation is described in details. Rapid formation of low-resistivity single-phase TiSi2 layers is realized directly during deposition of Ti onto Si from DC plasma of metal vapour with simultaneous powerful self-ion bombardment at Wi > 2.5–3.1 W/cm2. Accelerated reactive diffusion is activated by thermal (dT/dτ ≥ 10°C/sec) and radiation (Eadd ≤ 2500 eV/atom) effects of powerful Ti+-ion bombardment. Thin TiSi2 layers with resistivity ρ = 13–20 μΩcm are formed on different Si substrates under optimum energetic conditions after 50 sec of the deposition. The film structure formation passes through three kinetic stages.
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