Abstract
Morphological and crystallographical experiments of the rapid-quenched ribbon-formed silicon were studied with X-ray diffraction and microscopic observation on chemically etched ribbon surface. The rapid-quenched silicon ribbon is columnar structure polycrystalline without prominant preferred crystalline orientation. Average grain size of the silicon ribbon is 20 µm. Conductivity and Hall measurements showed, active carrier concentration was nearly equal to the doped impurity concentration in charge material. A conversion efficiency of 5% (94 mW/cm2) is obtained for an epitaxial solar cell on boron 6×1017/cm3 doped silicon ribbon.
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