Rapid preparation of semiconductor cross sections for TEM analysis

Abstract

Semiconductor manufacturers examine cross sections of their semiconductor devices to check the quality and integrity of their product. The growing complexity and diminishing size of these devices has caused manufacturers to increasingly rely on the resolving and analytical capabilities of TEM. The manufacturers' requirements for TEM analysis are: high specimen preparation spatial resolution (preparation of a specific area, usually less than 0.5 microns in size), a large sample area (at least 0.5 mm) available for examination, and a short sample preparation time (e.g. several hours). To meet these needs we have developed a technique for rapid preparation of cross sections for TEM analysis.The specific area to be cross sectioned on the sample is identified by marking it with a laser or Focused Ion Beam (FIB) tool. The sample is then cut down to a 3 x 6 mm rectangle with the area of interest in the center. This rectangle is mounted using wax onto a Tripod polisher with the area of interest protruding over the edge of the polisher.