Rapid onset of strain relief by massive generation of misfit dislocations in Bi(111)/Si(001) heteroepitaxy

Abstract

Strain and its relaxation in lattice mismatched heterostructures are crucial for the functionality of modern electronic devices, which are often challenging to determine experimentally. Here, we demonstrate a technique for measuring the strain state during epitaxial growth of Bi(111) films on Si(001) by using the spot profile analysis low-energy electron diffraction. Exploiting two non-equivalent integer-order diffraction spots originated from two Bi sub-lattices, the lattice parameter of the film is determined with high precision, which allows tracing the strain state as the film grows. The sudden and massive generation of misfit dislocations is found at a critical thickness of 4 nm which is explained through the inhomogeneous strain state of films with a thickness below one quarter of the mean distance of the dislocations.