Rapid Melt Growth of Single Crystal InGaAs on Si Substrates

Xue Bai,Chien-Yu Chen,Peter B Griffin,James D Plummer,Niloy Mukherjee

doi:10.1155/2016/7139085

Xue Bai, Chien-Yu Chen + Show 3 more

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https://doi.org/10.1155/2016/7139085

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Abstract

InGaAs integration on Si substrates is an important topic for next generation electronic devices. Rapid melt growth (RMG) has the potential to grow defect-free lattice mismatched materials on Si at low cost. Most previous publications have focused on growing binary III–V compounds by RMG, but none have discussed ternary compound materials. In this paper, we demonstrate the RMG of the single crystal ternary compound InGaAs on Si substrates. We discuss two main issues. The first is segregation along the stripe length. An analytical model is developed to describe the segregation of In/Ga in the grown stripe and the model is compared with experimental data. The second issue is the dissolution of the Si seed region during RMG, which leads to formation of Si islands inside the InGaAs stripe. The results of this study are applicable to any compound material in which Si is soluble at the elevated temperatures required for RMG.

Highlights

As the scaling of Si devices has become more challenging, researchers have been searching for alternative channel materials to enhance Si capabilities [1]
We conduct Rapid melt growth (RMG) experiments on amorphous InGaAs samples deposited on an insulator with a small seed window to the Si substrate and study their crystal quality by Electron Backscatter Diffraction (EBSD)
The annealed InGaAs stripes were characterized by Electron Backscatter Diffraction (EBSD) [13] to check their crystal quality

Summary

Introduction

As the scaling of Si devices has become more challenging, researchers have been searching for alternative channel materials to enhance Si capabilities [1]. Direct epitaxial growth of large area InGaAs on Si [4] requires a thick buffer layer to attempt to accommodate lattice mismatches. This complicates integrating InGaAs devices with underlying Si devices. Local epitaxial growth in small seed holes [6, 7] can help to confine defects due to lattice mismatch but this method has not yet been applied to large-scale manufacturing. No publications have described the RMG of any ternary compound materials such as InGaAs. In this study, we conduct RMG experiments on amorphous InGaAs samples deposited on an insulator with a small seed window to the Si substrate and study their crystal quality by Electron Backscatter Diffraction (EBSD). The Si dissolution from the seed is similar to that shown previously for Ge stripes [12] but is exacerbated by the low eutectic melting temperature between III–V materials and Si

Materials and Methods

Results and Discussion

Conclusion