Abstract
Single-crystal Ge films on insulating substrates are desired to achieve advanced 3-dimensional large-scale integrated circuits (3D-LSIs) and thin-film transistors (TFTs). We have developed the rapid-melting Ge growth seeded from Si substrates, which achieves giant Ge on insulator (GOI) structures with (100), (110), and (111) orientations. Driving force to initiate the lateral growth is clarified as the solidification temperature gradient originating from melting induced Si-Ge mixing. Combination with the artificial Si micro-seed technique and the rapid melting growth enables the single-crystal defect-free Ge on transparent insulating substrates. High hole mobility exceeding 1000 cm2/Vs is also demonstrated.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
