Rapid isothermal annealing of high- and low-energy ion-implanted InP and In/sub 0.53/Ga/sub 0.47/As

Abstract

Rapid isothermal annealing (RIA) was performed on 0.5-16-MeV Si/sup +/, 1-MeV Be/sup +/, and 150-keV Ge/sup +/ implanted InP:Fe and 380-keV Fe/sup +/ implanted InGaAs. Annealings were performed in the temperature range 800-925 degrees C using an InP proximity wafer in addition to the Si/sub 3/N/sub 4/ dielectric cap. Dopant activations close to 100% were obtained for 3*10/sup 14/ cm/sup -2/ Si/sup +/ and 2*10/sup 14/ cm/sup -2/ Be/sup +/ implants in InP:Fe. For the elevated temperature (200 degrees C) 1*10/sup 14/ cm/sup -2/ Ge/sup +/ implant, a maximum of 50% activation was obtained. No redistribution of dopant was observed for Si and Ge implants due to annealing. However, redistribution of dopant was seen for Be and Fe implants due to annealing. Phosphorous coimplantation has helped to eliminate the Be in-diffusion problem in InP, but did not help to reduce Fe in-diffusion and redistribution in InGaAs. Using an RIA cycle with low temperature and short duration is the only solution to minimize Fe redistribution in InGaAs. >