Abstract
Rapid isothermal processing based on incoherent radiation as the source of optical and thermal energy is playing a major role in flexible fast-cycle time integrated circuits manufacturing. In this paper, we present the dark and illuminated current-voltage characteristics of silicon Schottky barrier diodes where the ohmic contacts are formed by screen printing and rapid isothermal annealing. These results are compared with evaporated contacts followed by furnace annealing or rapid isothermal annealing. In this paper, we have shown that the ohmic contacts formed by screen printing and rapid isothermal annealing are compatible with the contacts formed by evaporation process. The processing time of the screen printed ohmic contacts is significantly lower than the contacts formed by evaporation process.
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