Abstract
Abstract A way in which thin films of hydrogenated amorphous silicon (a-Si: H) can be instantaneously crystallized at room temperature is reported. The metal-induced solid-phase crystallization (MISPC) method with nickel surface coverage is used. In comparison with previous reports on the MISPC of a-Si: H, the crystallization temperature is reduced by more than 350°C. This is achieved by introducing two novel technological steps: firstly, we use hydrogen-rich a-Si: H films (hydrogen content between 20 and 45at.% H) and, secondly, we apply a high transverse electric field. Polycrystalline silicon islands as large as 3 mm across appear instantaneously after having reached a threshold electric field of about 105Vcm−1. We report macroscopic visualization of the crystallization process as well as microscopic investigation (micro-Raman measurements and scanning electron microphotography) of the crystallized films. We have found that appropriate patterning of the nickel electrode helps to increase homogeneity of the resulting polycrystalline silicon.
Published Version
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