Abstract
In hydrogenated high-purity Si, the vacancy-oxygen $(V\mathrm{O})$ center is shown to anneal already at temperatures below $200\phantom{\rule{0.2em}{0ex}}\ifmmode^\circ\else\textdegree\fi{}\mathrm{C}$ and is replaced by a center, identified as a vacancy-oxygen-hydrogen complex, with an energy level $0.37\phantom{\rule{0.3em}{0ex}}\mathrm{eV}$ below the conduction-band edge and a rather low thermal stability. At long annealing times, the process is reversed and the concentration of the latter defect is reduced, while the $V\mathrm{O}$ center partly recovers. The divacancy $({V}_{2})$ center anneals in parallel with the initial annealing of the $V\mathrm{O}$ center, and the loss in ${V}_{2}$ exhibits a one-to-one proportionality with the appearance of a hole trap $0.23\phantom{\rule{0.3em}{0ex}}\mathrm{eV}$ above the valence-band edge attributed to a divacancy-hydrogen $({V}_{2}\mathrm{H})$ center.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call