Abstract
Data characterizing the transient annealing of the gate threshold voltage of contemporary CMOS transistors following exposure to pulsed ionizing radiation are presented and discussed. Devices tested during the study include those fabricated on both bulk silicon and silicon-on-sapphire substrates. Silicon dioxide and aluminum oxide gate dielectrics are evaluated. Leakage current phenomena associated with charge formation in dielectric substrates or dielectric isolation layers are also considered.
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