Ranges, straggling and carrier concentration profiles of 0.5–6.0 MeV phosphorus in silicon

Abstract

Using an lonex Company 2×1.7 MeV Tandem experiments were conducted to obtain a more detailed knowledge of ranges, straggling and carrier concentration profile for P + implanted into P-type (111) Si at 0.5–6.0 MeV to doses ranging from 4×10 12 to 1×10 13 cm −2. The annealing of the samples was carried out by Rapid Thermal Annealing (RTA) at 1000–1050°C for 10 s to achieve a high electrical activation and small spreading. The carrier concentration profiles were measured by Spreading Resistance Probe (SRP). It is found that the profiles are two joined half-Gaussian distribution with different standard deviations σ front and σ back. σ front is greater than σ back. The buried layers of N-type carrier appear when the P + energy is higher than 3.0 MeV. The ranges and straggling of 0.5–6.0 MeV P + implantation in Si have been obtained, but the values of measured ranges are less than that of the theoretical values. Some characteristics of the high energy P + implantation in Si are discussed.