Abstract
The effective “spin–orbit” field acting upon spins of carriers in two-dimensional electronic structures (the Rashba field) arises due to the spatial asymmetry of the system. It will be shown in this letter that even in quantum wells with perfectly symmetric environment, a random Rashba field arises due to fluctuations of concentration of dopant ions. The magnitude of the field, its correlation function, and electron spin relaxation rate in this field are presented.
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