Random number generator via hexagonal boron nitride heterostructure

Abstract

The nonlinearity is the heart of cryptographic methods which are based on the generation of pseudo-random numbers. In this study, the metal-insulator transition in hexagonal boron nitride (hBN) was investigated as a true random number generator. We have focused on the environmental-dependent behavior of hBN lattices, such as lattice size, impurity types, and applied external voltage on conductivity. The study was carried out based on random matrix theory, with spectral analysis of energy level spectrum and fractal dimension. The results indicate that by increasing the value of the electrical field, the hBN lattice behavior changes from Poisson (regular) to Wigner distribution (chaotic). The study of current-voltage variation has shown the periodic windows of quasi ohmic and the negative differential resistance. The produced electrical current ability as a random number has been examined through generating a dynamical S-box.