Abstract
We have numerically studied the behavior of one dimensional tunnel junction arrays when random background charges are included using the ``orthodox'' theory of single electron tunneling. Random background charge distributions are verified in both amplitude and density. The use of a uniform array as a transistor is discussed both with and without random background charges. An analytic expression for the gain near zero gate voltage in a uniform array with no background charges is derived. The gate modulation with background charges present is simulated.
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