Random and channeling stopping power of H in Si below 100 keV

Abstract

Range profiles of H in Si, implanted in random and channeling directions at 10, 40 and 100keV, are determined by SIMS and are used to calibrate an analytical model of electronic stopping implemented in our binary collision simulator IMSIL. The fitted random stopping power is within 6% of the latest versions of the stopping powers of Paul (http://www.exphys.uni-linz.ac.at/Stopping) and of SRIM (http://www.srim.org). The electronic energy loss in the center of the widest channel in Si, the [110] channel, is only slightly lower than in random direction, the maximum difference being 13% at the stopping power maximum. The precise shape of the range profiles of H channeled along [110] can only be reproduced by assuming a significantly higher electronic energy loss straggling than proposed in the literature.