Abstract
We fabricated a ramp-edge Josephson junction with a 17-nm-thick indium-tin-oxide (ITO) (1 wt%) barrier. ITO is considered to be a useful barrier material for Josephson junctions because it has a low permittivity of 20, a mobility of 100 cm2/V·s, a carrier density of 1.1×1020 cm-3, and (100) orientation on YBa2Cu3O7-x (YBCO) (001). We examined 8 junctions with widths ranging from 6 µm to 10 µm at temperatures varying from 20 K to 80 K. All of the junctions showed resistively shunted junction (RSJ)-type I-V characteristics at temperatures between 20 K and 77 K. The maximum critical current density, Jc, and critical current normal resistance products, IcRn, were 4.0×104 A/cm2 and 2.2 mV, and the averages of these values at 20 K were 2.7×104 A/cm2 and 1.7 mV, respectively. The standard deviation of Ic and IcRn were σI=33% and σIcRn =21%, respectively. Ic was suppressed well by a magnetic field.
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