Abstract
For Cd-doped amorphous GeSe2 films Raman spectra reveal a considerable decrease of the amount of edge-sharing GeSe4 tetrahedra and an increasing number of ethane-like Se3Ge–GeSe3 structural units compared to the undoped films. A Raman peak with a frequency close to that of the CdSe LO phonon observed for the Cd-doped films at increasing laser power density (Pexc ≥ 100 kW/cm2) provides evidence for the photoinduced formation of CdSe nanoparticles in the GeSe2:Cd films due to photoenhanced diffusion.
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