Raman studies on GaAs1−xBix and InAs1−xBix

Abstract

The lattice vibrational properties of new semiconductor alloys, GaAs1−xBix and InAs1−xBix, are reported. These alloys, which were grown by metalorganic vapor phase epitaxy technique, contain a small amount (1.2%–3.8%) of Bi. A detail Raman scattering study of these new alloys, which exhibit weak temperature dependence of the band gap with increasing amount of Bi, is reported here. Good crystalline quality and spatial homogeneity was confirmed using micro-Raman technique. The alloys show ternary compound behavior, confirming substitutional incorporation of Bi into the lattice site. New vibrational modes observed were assigned to GaBi-like and InBi-like modes. In addition, phonon-plasmon coupled modes and vibrational modes corresponding to Bi and As materials were also observed. Results are discussed to characterize these new alloys in detail.