Abstract
ABSTRACTWe have studied the hydrogen passivation of boron acceptors in bulk crystalline silicon with Raman scattering. Upon hydro-genation, distinct changes in the optical phonon lineshape and the localized vibrational modes of boron are observed. The hy-drogen in the passivated region gives rise to a specific Raman-active mode, whose vibrational frequency depends strongly on temperature and uniaxial stress. Implications of these results on possible structural models are discussed.
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