Abstract
We summarize recent results in hydrogen passivation in silicon, and present the first comprehensive diffusion profiles, i.e. profiles in floating zone n-type and p-type vs. temperature and vs. resistivity. Domination of hydrogen diffusion by impurity trapping is clearly indicated for part of the profile in low resistivity p-type silicon. Also discussed are the current models of hydrogen passivation of dangling bonds, shallow acceptors, shallow donors and hyper-deep defects.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
