Abstract
Depth-resolved Raman spectroscopy study of semi-insulating (SI) 6H-Silicon Carbide (SI:6H-SiC) implanted with Al+ of three ion fluencies at 400 keV and re-crystallization upon annealing at 800 °C are presented. Deformations related to SiC bond breakages and defect recovery were investigated from the Raman first-order acoustical and second-order optical phonon modes. Annealing effected the asymmetrical to symmetrical Raman peaks and the regaining of active Raman modes. Raman Z- scan studies exhibited an amorphous broad feature in the near-surface and partial recovery in the deep region of the high fluence annealed sample indicating the defects' agglomeration and recrystallization.
Published Version
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