Abstract
This paper presents a study on the lattice dynamics of doped topological insulator (Cu,Ni)xBi2Se3 single crystals probed using Raman scattering spectroscopy. The single crystals were grown by melting and characterized through X-ray diffraction and scanning electron microscopy with energy dispersive X-ray spectroscopy. The diffraction patterns were indexed within the space group R-3m and the samples belonged to the rhombohedral layered structure group typical of Bi2Se3. A Raman scattering study was developed, in which three modes were observed at low frequencies: A1g1, Eg2 and A1g2. The low frequency Eg1 mode, even if theoretically predicted, was not observed. No difference was observed in Raman lines between the pure and (Cu,Ni)-doped samples, indicating that the Cu and Ni are probably intercalated (and not substituted) between the Se layers.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
