Raman spectroscopy of polycrystalline molybdenum silicide thin films

Abstract

Polycrystalline molybdenum disilicide thin films have been prepared by RF magnetron co-sputtering of molybdenum and silicon onto P-type silicon (100) substrates and annealing thereafter using RTA technique. Raman spectroscopy was used to study the microstructural details of these films. The Raman spectra clearly indicated the random distribution of excess silicon available after the formation of MoSi 2 (tetragonal) phase within the matrix at low annealing temperatures and its outdiffusion towards the substrate-film interface at higher annealing temperatures. The spectra also suggested a change in the nature of stress due to the outdiffusion of silicon.