Raman spectroscopy of amorphous silicon subjected to laser annealing

Abstract

The effect of laser radiation power on the Raman spectra of amorphous silicon obtained by electron-beam evaporation has been revealed. The formation of nanocrystalline inclusions in the amorphous matrix under exposure to a laser with a power of more than 2.5 mW is established by Raman spectroscopy and photoluminescence. The influence of the fabrication conditions (substrate temperature and annealing in a vacuum) of source amorphous silicon films on the formation of nanocrystalline inclusions formed by subsequent laser treatment has been investigated. The features of silicon nanocrystal formation in cases when the original amorphous silicon film is obtained at a substrate temperature of ∼250°C have been revealed. These features may be associated with the presence of silicon-silicon multiple bonds.