Abstract
The neodymium doped Yttrium Fluoride (Nd: YLF) has emerged as one of the most valuable functional-materials, and thus attracted plenty of research and promising applications in recent years. In this work, the Nd: YLF crystal was irradiated by 80 keV Ga ion with a fluence of 1.0 × 1015 cm−2. The lattice structure and mechanical properties before and after Ga ion irradiated were studied by X-ray diffraction pattern and nano-indentation test. The damage effect of 80 keV Ga ion irradiation were investigated by Rutherford backscattering/channeling technique. This work is mainly focused on the lattice dynamics which studied by the Raman spectra in Ga ion irradiated Nd: YLF. After Ga ion irradiation, the peak intensity increased 84% for the rotational mode Bg at 325 cm−1, which shows unique potential in application of highly sensitive sensors.
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