Abstract
Raman scattering by collective electronic excitations from a δ-doping layer has been used to investigate the ordered incorporation of Si dopant atoms on vicinal GaAs(001) surfaces. In a series of δ-doped samples grown by molecular beam epitaxy (MBE) under specific conditions the Si dopant atoms were found to be incorporated predominantly on Ga sites, even at a doping concentration as high as 1.8×1013 cm−2. A pronounced polarization asymmetry in the Raman scattering intensity of collective intersubband plasmon-phonon modes was observed in a sample grown under conditions established by real-time high-energy electron diffraction to be favorable for wirelike Si incorporation.
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