Abstract
It is known that optically anisotropic media can change the polarization of light propagating inside them. As regards Raman spectroscopy, this affects the light intensity measured in different geometrical configurations and results in an apparent unfulfillment of selection rules. We present an experimental and theoretical study of such effects in the defect chalcopyrite semiconductor $\mathrm{Mn}{\mathrm{Ga}}_{2}{\mathrm{Se}}_{4}$. Optical anisotropy is taken into account by including in the calculation of Raman intensities the phase difference appearing between ordinary and extraordinary waves as they propagate, in uniaxial media, with different velocities. Birefringence can be obtained from Raman measurements provided that the distance run by the light is known.
Highlights
MnGa2Se4 is a ternary, ordered-vacancy semiconductor with a defect-chalcopyrite structurespace group I4͒1 and potential technological applications in the field oflinear and nonlinearoptical and optoelectronic applications.2–5 In this particular compound, the presence of Mn ions adds a magnetic behavior that opens the way to magneto-optical properties
Optical anisotropy is taken into account by including in the calculation of Raman intensities the phase difference appearing between ordinary and extraordinary waves as they propagate, in uniaxial media, with different velocities
Cell doubling leads to optical anisotropy and behavior as a uniaxial medium
Summary
MnGa2Se4 is a ternary, ordered-vacancy semiconductor with a defect-chalcopyrite structurespace group I4͒1 and potential technological applications in the field oflinear and nonlinearoptical and optoelectronic applications. In this particular compound, the presence of Mn ions adds a magnetic behavior that opens the way to magneto-optical properties. MnGa2Se4 is a ternary, ordered-vacancy semiconductor with a defect-chalcopyrite structurespace group I4͒1 and potential technological applications in the field oflinear and nonlinearoptical and optoelectronic applications.. MnGa2Se4 is a ternary, ordered-vacancy semiconductor with a defect-chalcopyrite structurespace group I4͒1 and potential technological applications in the field oflinear and nonlinearoptical and optoelectronic applications.2–5 In this particular compound, the presence of Mn ions adds a magnetic behavior that opens the way to magneto-optical properties. Reports on refraction indexes and/or birefringence of ordered-vacancy compounds are scarce.. Reports on refraction indexes and/or birefringence of ordered-vacancy compounds are scarce.4,6–9 From the structural point of view, the properties of MnGa2Se4 are dominated, by comparison with its parental zinc-blende compounds, by the presence of cation asymmetry and ordered vacancies, yielding a tetragonal structure with c Ϸ 2aa = 5.677͑1͒ Å, c = 10.761͑2͒ Å.10. The combination of all these properties results in a wealth of phenomena, as regards its vibrational properties, that deserves a close spectroscopic study
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