Abstract
Distributions of phonons in ZnSxSe1-x, ZnTexSe1-x mixed crystals were observed by Raman-scattering tomography as stripes which were caused by the lack of some elements of the Raman tensor due to rotational twins around the (111) axis. The technique was also applied to the analysis of phonons on the surfaces of Si-doped GaAs crystals, Si-implanted GaAs crystals and epitaxial layers of ZnSe on GaAs crystals.
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