Abstract
We have investigated the band-bending behaviour of a caesium-covered p-GaAs (110) surface by electric-field-induced Raman scattering. A high potential barrier height (approximately 1.5±0.2 eV) was found at high caesium coverage (about 2 monolayers), and we conclude that the metallic property of caesium plays a significant role in this system when the overlayer is thick.
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