Abstract
We report here on a detailed Raman scattering study of InGaAs/AlAsSb superlattices (SLs) and quantum-wells (QWs) grown by molecular beam epitaxy (MBE). The interface termination procedure and AlAs interface control layer are shown to influence the Raman spectra significantry, as follows: (1) the Sb-terminated SL shows a clear InSb-related interface phonon at around 195 cm -1 , and (2) when 3-ML of AlAs is introduced, no features were observed below 200 cm -1 , indicating well-controlled interfaces.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
