Raman scattering studies of donor transitions in semiconductor quantum-well structures

Abstract

Raman scattering from bound electrons has been observed in Si‐doped GaAs–A1xGa1−xAs multiple heterostructures. The donor‐related features show broadening due to the dependence of the donor spectrum on the position of the impurity in the well. Transitions from 1s to 2s states and bound excitations associated with intersubband transitions were identified. The latter observation confirms the existence of resonant impurity states in quantum‐well structures.