Observation of resonant impurity states in semiconductor quantum-well structures.

Abstract

Resonant Raman scattering experiments on GaAs(Si doped)-${\mathrm{Al}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{As}$ quantum-well structures show transitions involving the ground state of the donors and narrow resonant donor states derived from higher conduction subbands. These new impurity-related features, which occur at slightly higher energies than the associated conduction intersubband excitations, have been studied as a function of power density, temperature, and well width.