Abstract
AbstractIon-implantation has been an interesting topic on impurity-doping in GaN. Raman measurement is a strong tool for the characterization of semiconductors. We have investigated the Raman scattering spectra in Be-implanted GaN epilayers. In as-implanted GaN, new Raman bands at ∼310, ∼360, 669 cm-1 appeared. From phonon-dispersion curves for hexagonal GaN, the ∼300 cm-1 and 669 cm-1 bands were assigned to the highest acoustic-phonon branch and the optical-phonon branch at the Brillouin zone boundaries, respectively. Two sharp bands at 168 and 199 cm-1 were observed in the Raman spectra of Be-implanted GaN after post-implantation annealing treatments. We tentatively assign these two bands to Be-related local vibrational modes.
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