Abstract
Epitaxial layers of GaAs grown by Metal Organic Vapor Phase Epitaxy on InP (111) A and B polar substrates have been investigated by Raman scattering. The tensile strain, mainly due to the lattice mismatch between GaAs and InP, has been evidenced by the red shifts of both the TO and LO GaAs phonons. From these shifts approximate values of the parallel strain have been obtained using phonon deformation potential parameters. With identical growth conditions and times, larger growth rates are found for A than for B samples.
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