Abstract
We report measurements of Raman scattering in ion-implanted semiconductors. The broadening of the phonon modes produced by lattice strains on Xe ion implantation is measured for GaAs. The measurements show pronounced effects on the linewidth at moderate fluence levels and demonstrate that Raman scattering can provide a sensitive technique for probing stresses introduced by ion implantation. At higher-fluence levels where the material begins to transform from crystalline to amorphous, the linewidth is found to increase rapidly with fluence.
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