Abstract
Using Raman scattering by local vibrational modes (LVM) and collective electronic excitations we have investigated the ordered incorporation of Si dopant atoms on vicinal GaAs(001) surfaces. LVM spectra revealed for a sequence of δ-doped samples grown by molecular beam epitaxy (MBE) under specific conditions that the Si dopant atoms are predominantly incorporated on Ga-sites even at a doping concentration as high as 1.8 × 10 13 cm −2. For a sample grown under conditions established by real-time high-energy electron diffraction (RHEED) to be favourable for the wire-like Si incorporation, a pronounced polarization asymmetry in the Raman scattering intensity of collective intersubband plasmon-phonon modes arising from the δ-doping layer has been found.
Published Version
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