Raman scattering from Ge nanostructures grown on Si substrates: Power and limitations

Abstract

The analysis of Raman spectra obtained for different germanium nanostructures grown on silicon substrates is presented. Comparison of these spectra with a Raman spectrum of a silicon wafer reveals a one-to-one correspondence of features located around 229, 300, and 435 cm−1. It is argued that the peaks observed at these frequencies and often ascribed to Ge nanostructures are, in fact, coming from the Si substrate. The erroneous ascription of the peaks makes the corresponding conclusions incorrect.