Abstract
We report the observation of electronic Raman scattering from phosphorus donors and boron acceptor impurities in silicon. We find that the most important intermediate states involve interband transitions, and that this has important consequences for the intensity of the scattering. We also report observation of phonon-Raman scattering involving creation of one zone-center optical phonon with subsequent decay through the anharmonic interaction into two acoustic phonons.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
