Raman scattering and electrical properties of Zn1−xMnxO films

Abstract

Mn-doped ZnO films with different Mn contents (0–6.72at.%) were grown on fused quartz substrates by radio-frequency (RF) magnetron sputtering. The influences of Mn doping on the structural, Raman scattering and electrical properties of ZnO films were investigated. The results indicate that Mn incorporation occupying on the Zn sites has led the lattice constants of the films increased with the structural crystal quality deteriorated. Apart from the conventional phone modes of ZnO host lattice, one additional mode located at 526cm−1 was observed in the Raman spectra of Zn1−xMnxO films and its intensity showed an increasing tendency with the increment in Mn content, which can be assigned to an indication for Mn incorporation into the ZnO lattice in ZnO:Mn systems. Additionally, we also found that the increment of Mn doping induced severe suppressions of electron carriers and mobility in Zn1−xMnxO films. The corresponding mechanism has been discussed in detail.