Abstract
Visible and deep UV Raman measurements have been applied to investigate the structural and electrical properties of stacking disordered 3C-SiC crystals. It is found that free-carrier density shows the significant dependence on the density of stacking faults in 3C-SiC. The density of stacking faults has been estimated from the comparison between experimentally obtained Raman spectra and Raman intensity profiles simulated using one-dimensional lattice models considering the disorder in bond polarizability arrangement.
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