Raman, photoluminescence and morphological studies of Si- and N-doped diamond films grown on Si(100) substrate by hot-filament chemical vapor deposition technique

Abstract

Studies on the effects of intentionally doped Si and N impurities on the growth and structural characteristics of diamond films prepared by hot-filament chemical vapor deposition are reported. The Si-doped diamond films exhibit enhancement of crystallite size whereas N-doped films indicate large changes in nucleation density and morphology. Both impurities were observed to show disorder effects at higher concentrations. The photoluminescence band at 1.683 eV was observed to enhance with increase in concentration of both impurities while it was expected to disappear when N alone was doped. The origin of the 1.683-eV band is correlated to the monovacancies stabilized by the impurity atoms.