Abstract
Abstract Edge structures are ubiquitous in the processing and fabrication of various optoelectronic devices. Novel physical properties and enhanced light-matter interactions are anticipated to occur at crystal edges due to its broken spatial translational symmetry. However, the intensity of first-order Raman scattering at crystal edges has been rarely explored, although the mechanical stress and edge characteristics have been thoroughly studied by the Raman peak shift and the spectral features of the edge-related Raman modes. Here, by taking GaAs crystal with a well-defined edge as an example, we reveal the intensity enhancement of Raman-active modes and the emergence of Raman-forbidden modes under specific polarization Raman configurations at the edge. This is attributed to the presence of hot spot at the edge, due to the redistributed electromagnetic fields and electromagnetic wave propagations of incident laser and Raman signal near the edge, which are confirmed by the finite-difference time-domain simulations. Spatially-resolved Raman intensity of both Raman-active and Raman-forbidden modes near the edge is calculated based on the redistributed electromagnetic fields, which quantitatively reproduce the corresponding experimental result. These findings offer new insights into the intensity enhancement of Raman scattering at crystal edges and presents a new avenue to manipulate the light-matter interactions of crystal by manufacturing various types of edges and to characterize the edge structures in photonic and optoelectronic devices.
Published Version
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