Abstract
AbstractA MoS2 microtube synthesized by chemical transport reaction was studied by Raman line scan mapping. The Raman spectrum of the MoS2 microtube closely resembles that of a MoS2 single crystal. For the first order A1g and E2g Raman modes, the same frequencies can be observed for both MoS2 microtubes and single crystals, respectively, while line widths are slightly larger in the microtube spectrum, which can be attributed to defects. In the line scan along the tube axis, the wave numbers of first order peaks are constant, while a slight up‐shift of the Raman lines is observed in a line scan perpendicular to the tube. Possible mechanisms are discussed and the heating effect is proposed. Line scan approach over the edge of an object thus enables accurate determination of positions of first order peaks in highly absorbing materials.
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