Abstract
We have fabricated epitaxial chalcopyrite alloys with varying compositions and thicknesses on GaAs (001) substrates using a simple physical vapor deposition method. Growth of the films was characterized with Raman spectroscopy as well as by other analytical techniques. We identified both CuInSe 2 (001) and CuIn 3Se 5 (001). All of the spectra were dominated by the A 1(Γ 1 (1) [W 1]) non-polar optical mode at 172 cm −1 for CuInSe 2 and 152 cm −1 for the CuIn 3Se 5 phase. In addition, Raman spectra for the thinner layers indicated that these films are under compressive stress due to the lattice mismatch between the films and the substrate.
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